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| SMD Schottky Barrier Diode COMCHIP SMD Diodes Specialist CDBF0140R Io = 100 mA VR = 40 Volt s Features Low forward Voltage (Lead-free Device) 1005(2512) 0.102(2.60) 0.095(2.40) Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction. 0.051(1.30) 0.043(1.10) Mechanical data Case: 1005 (2512) Standard package , molded plastic. 0.020(0.50) Typ. 0.035(0.90) 0.027(0.70) Terminals: Gold plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band. Mounting position: Any. Weight: 0.006 gram (approximately). 0.020(0.50) Typ. 0.012 (0.30) Typ. Dimensions in inches and (millimeter) Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Peak reverse voltage Reverse voltage Average forward rectified current Forward current , surge peak Storage temperature Junction temperature 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) Conditions Symbol Min Typ Max Unit VRM VR Io IFSM TSTG Tj -40 -40 45 40 100 1 +125 +125 V V mA A C C Electrical Characteristics ( at T A = 25 C unless otherwise noted ) Parameter Forward voltage Reverse current Capacitance between terminals I F = 10 mA VR = 10 V f = 1MHz, and 10 VDC reverse voltage Conditions Symbol Min Typ Max Unit VF IR CT 6 0.45 1 V uA pF REV:A QW-A1016 Page 1 SMD Schottky Barrier Diode COMCHIP SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBF0140R) Fig. 1 - Forward characteristics 1m 1000 Fig. 2 - Reverse characteristics 100u Forward current (mA ) 100 Reverse current ( A ) 125 O C 10u 75 1u O C 10 100n 25 O O 75 C C 12 5 O C 25 O C 1 O C 25 10n O 25 C 1n 0.1 0 0 .2 0.4 0.6 0.8 1.0 0 10 20 30 40 Forward voltage (V) Reverse voltage (V) Fig. 3 - Capacitance between terminals characteristics Fig. 4 - Current derating curve 100 Capacitance between terminals (pF) Average forward current ( % ) 100 80 60 40 20 0 0 25 50 75 100 125 10 1 0 5 10 15 20 25 30 35 40 Reverse voltage (V) Ambient temperature ( C ) REV:A QW-A1016 Page 2 |
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